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| MAD1104 and MAD1104e3 Switching Diode Array Steering Diode TVS ArrayTM SCOTTSDALE DIVISION DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick-and-place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. They are available with either Tin-Lead plating terminations or as RoHS Compliant with annealed matte-Tin finish by adding an "e3" suffix to the part number. APPEARANCE WWW .Microsemi .C OM Top Viewing Pin Layout IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com FEATURES * * * * * * * 16 Diode Array / protects 8 lines Molded 14-Pin Dual-In-Line Package UL 94V-0 Flammability Classification Low Capacitance 1.5 pF per diode Switching speeds less than 5 ns RoHS Compliant devices available by adding "e3" suffix IEC 61000-4 compatible 61000-4-2 (ESD): Air 15kV, contact - 8 kV 61000-4-4 (EFT): 40A - 5/50 ns 61000-4-5 (surge): 12A, 8/20 s APPLICATIONS / BENEFITS * Low capacitance steering diode protection for high frequency data lines * RS-232 & RS-422 Interface Networks * Ethernet: 10 Base T * Computer I / O Ports * LAN * Switching Core Drivers MAXIMUM RATINGS * * * * * * Operating Temperature: -55C to +150C Storage Temperature: -55C to +150C Forward Surge Current: 2 Amps (8.3 ms) 12 Amps (8/20 s) Continuous Forward Current: 400 mA (one diode) Power Dissipation (PD): 1500 mW (total) Solder temperatures: 260C for 10 s (maximum) MECHANICAL AND PACKAGING * CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 flammability classification * TERMINALS: Tin-Lead or RoHS Compliant annealed matte-Tin plating solderable per MIL-STD750 method 2026 * MARKING: MSC logo, MAD1104 or MAD1104e3 and date code. Pin #1 is to the left of the dot or indent on top of package. * WEIGHT: 0.997 grams (approximate) * Carrier tubes: 25 pcs (Standard) MAD1104, e3 ELECTRICAL CHARACTERISTICS PER LINE @ 25C Unless otherwise specified BREAKDOWN VOLTAGE VBR @ IBR =100A V MIN MAD1104 MAD1104e3 90 WORKING PEAK REVERSE VOLTAGE VRWM V MAX 75 LEAKAGE CURRENT IR TA = 25C A MAX 0.200 @VR 20 MAX 300 LEAKAGE CURRENT IR TA = 150C A @VR 20 CAPACITANCE C @0V pF TYP 1.5 REVERSE RECOVERY TIME trr ns MAX 5.0 FORWARD VOLTAGE VF IF = 10 mA V MAX 1.00 FORWARD VOLTAGE VF IF = 100 mA V MAX 1.20 PART NUMBER Copyright (c) 2005 6-28-2005 REV L Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 MAD1104 and MAD1104e3 Switching Diode Array Steering Diode TVS ArrayTM SCOTTSDALE DIVISION Symbol VBR VRWM VF IR C SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. WWW .Microsemi .C OM OUTLINE AND CIRCUIT Supply rail (+VCC) I/O Port GND (or -VCC) STEERING DIODE APPLICATION figure 1 INCHES DIM A B C D E F G H I J 0.015 0.017 0.140 0.040 MIN 0.740 0.235 0.120 0.270 0.320 MAX 0.780 0.265 0.140 0.330 0.380 0.100 BSC 0.021 0.023 0.160 0.070 0.381 0.431 3.556 1.016 MILLIMETERS MIN 18.80 5.969 3.048 6.858 8.128 MAX 19.81 6.731 3.556 8.382 9.652 2.540 BSC 0.533 0.584 4.064 MAD1104, e3 1.778 OUTLINE CIRCUIT CONFIGURATION Copyright (c) 2005 6-28-2005 REV L Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 |
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